首页 >BSS138(GP-49)>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseprod | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
60V,singleN-channelTrenchMOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,360mAN-channelTrenchMOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ES | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-ChannelEnhancementModeMOSFET Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
60V,360mAN-channelTrenchMOSFET | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
60V,360mAN-channelTrenchMOSFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. Featuresandbenefits -Logic-levelcompatible -Veryfastswitching -TrenchMOSFETtechn | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Nch60V400mASmallSignalMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
60V,320mAdualN-channelTrenchMOSFET 1.1Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363 (SC-88)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechno | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,320mAdualN-channelTrenchMOSFET | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
60V,320mAN-channelTrenchMOSFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■ESDprotection | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
60V,320mAN-channelTrenchMOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESD | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Nch60V380mASmallSignalMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
nullN-ChannelEnhancementModeMOSFET Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
Nch60V380mASmallSignalMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Plastic-EncapsulateMOSFETS APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible -CARforautomotiveandother | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | GWSEMI | ||
DualN-ChannelMOSFET Feature HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible Application DirectLogic-LevelInterface:TTL/CMOS BatteryOperatedSystems Solid-StateRelays | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | GWSEMI | ||
DualN-Channel60V(D-S)MOSFET •LowOn-Resistance:1.5 FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
DualN-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowOn-Resistance:2.5Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •AvailableinLeadFree/RoHSCompliantVersion(Note4) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes5and6) | DIODESDiodes Incorporated 达尔科技 | DIODES |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KEXIN |
22+ |
SOT23 |
12000 |
进口原装 |
询价 | ||
LRC |
22+ |
SOT-23 |
10937 |
原装现货 |
询价 | ||
LRC |
23+ |
SOT-23 |
10937 |
专注配单,只做原装进口现货 |
询价 | ||
LRC |
23+ |
SOT-23 |
10937 |
专注配单,只做原装进口现货 |
询价 | ||
DIODES/美台 |
23+ |
SOT23 |
12000 |
原装正品假一罚百!可开增票! |
询价 | ||
DIODES/美台 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
DIODES/美台 |
22+ |
SOT23 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
DIODES/美台 |
2022+ |
SOT-23 |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
询价 | ||
DIODES美台 |
22+21+ |
SOT-23 |
12663 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
DIODES/美台 |
23+ |
NA/ |
12663 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
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