BSS84

Small Signal MOSFET P-Channel

Features: *LowOn-Resistance:10Ω *LowInputCapacitance:30PF *LowOutputCapacitance:10PF *LowThreshole:2.0V *FastSwitchingSpeed:2.5ns Application: *DCtoDCConverter *Cellular&PCMCIACard *CordlessTelephone *PowerManagementinPortableandBatteryetc.

BSS84

P-CHANNEL ENHANCEMENT MODE MOSFET

ThisisaP-channel,enhancement-modeMOSFET,housedintheindustrystandard,SOT-23package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES LowOn-Resistance Availableinlead-freeplating(100mattetinfinish) LowGateThresholdVoltage

BSS84

P-channel enhancement mode vertical DMOS transistor

Generaldescription P-channelenhancementmodeverticalDiffusionMetal-OxideSemiconductor(DMOS)transistorinasmallSurface-MountedDevice(SMD)plasticpackage. Features ■Lowthresholdvoltage ■High-speedswitching ■DirectinterfacetoCMOSand Transistor-TransistorLogic(TTL)

BSS84

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Lead,HalogenandAntimonyFree,RoHSCompliant(Note3) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHighReliability

BSS84

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS®Small-SignalTransistor •Pchannel •Enhancementmode •LogicLevel •VGS(th)=-0.8...-2.0V

BSS84

SOT-23 Field Effect Transistors

SOT-23FieldEffectTransistors P-ChannelEnhancement-ModeMOSFETs

BSS84

Energy Efficient

SOT-23Plastic-EncapsulateMOSFETs DESCRIPTION TheseminiaturesurfacemountMOSFETsreducepowerlossconserveenergy,makingthisdeviceidealforuseinsmallpowermanagementcircuitry. FEATURE ●EnergyEfficient ●LowThresholdVoltage ●High-speedSwitching ●MiniatureSurfaceMountP

BSS84

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channelenhancementmodeverticalD-MOStransistorinaSOT23SMDpackage. FEATURES •Lowthresholdvoltage •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondarybreakdown. APPLICATIONS •Linecurrentinterrupterintelephonesets •Relay,highspeeda

BSS84

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisdesignedtominimizeon-stateresistance,provideruggedandreliableperformanceandfastswitching

BSS84

P-Channel Enhancement Mode MOSFET

P-ChannelEnhancementModeMOSFET Feature ●-50V,-0.13A,RDS(ON)=10Ω@VGS=-10V ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage.

BSS84

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapaci

BSS84

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisdesignedtominimizeon-stateresistance,provideruggedandreliableperformanceandfastswitching

BSS84

P-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS-60V ●ID-0.17A ●RDS(ON)(atVGS=-10V)

BSS84

P-Channel Enhancement Mode Field Effect Transistor

Features •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:B84 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

BSS84

P-CHANNEL MOSFET

P-CHANNELMOSFET DESCRIPTION TheseminiaturesurfacemountMOSFETsreducepowerlossconserveenergy,makingthisdeviceidealforuseinsmallpowermanagementcircuitry. FEATURE ●EnergyEfficient ●LowThresholdVoltage ●High-speedSwitching ●MiniatureSurfaceMountPackageSavesBoard

BSS84

P-Channel 20-V (D-S) MOSFET

Description TheseminiaturesurfacemountMOSFETsutilizeahighcelldensitytrenchprocesstoprovidelowrDS(on)andtoensureminimalpowerlossandheatdissipation.TypicalapplicationsareDC-DCconvertersandpowermanagementinportableandbattery-poweredproductssuchascomputers,pri

BSS84

P-Channel Enhancement Mode MOSFET

Feature ●-50V/-0.13A,RDS(ON)=10Ω(MAX)@VGS=-5V,Ids=-0.1A ●SuperHighdensecelldesignforextremelylowRDS(ON) ●ReliableandRugged ●SOT-23forSurfaceMountPackage Applications ●PowerManagement PortableEquipmentandBatteryPoweredSystems.

BSS84

P-Channel Enhancement Mode MOSFET

Feature ●-60V/-0.13A,RDS(ON)=≤6Ω(MAX)@VGS=-10V ●SuperHighdensecelldesignforextremelylowRDS(ON) ●ReliableandRugged ●SOT-23forSurfaceMountPackage ●ESDprotection

BSS84

P-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions P-CHANNELMOSFETinaSOT-23PlasticPackage. Features Lowthresholdvoltage,DirectinterfacetoC-MOS,TTLetc,High-speedswitching. Applications Linecurrentinterrupterintelephonesets,Relay,Highspeedandlinetransformerdrivers.

BSS84

P-Channel Enhancement Mode Power MOSFET

P-ChannelEnhancementModePowerMOSFET TheseminiaturesurfacemountMOSFETsreducepowerlossconserveenergy,makingthisdeviceidealforuseinsmallpowermanagementcircuitry.Typicalapplicationsaredc–dcconverters,loadswitching,powermanagementinportableandbattery–poweredproduc