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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
BRA123	文件：171.78 Kbytes Page：12 Pages	PNPBuilt-inResistorTransistorCMPAKSeriesInverter,Driver,Switching Features •Built–inResistorType •SimplifiesCircuitDesign •ReducesBoardSpace •ComplementarypairwithBRC144ECMseries	HitachiHitachi, Ltd. 日立公司	Hitachi
BSS123K	文件：433.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
BSS123K	文件：459.51 Kbytes Page：7 Pages	N-CHANNELENHANCEMENTMODEMOSFET Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplications	DIODESDiodes Incorporated 达尔科技	DIODES
BSS123K	文件：237.94 Kbytes Page：6 Pages	NCEN-ChannelEnhancementModePowerMOSFET GeneralFeatures ●VDS=100V,ID=0.17A RDS(ON)	NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司	NCEPOWER
BSS123L	文件：1.69212 Mbytes Page：7 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BSS123L	文件：486.71 Kbytes Page：5 Pages	MOSFETN-CHANNELPOWERMOSFET DESCRIPTION TheBSS123L isavailableinSOT23package FEATURES AvailableinSOT23package	AITSEMIAiT Semiconductor Inc. AiT創瑞科技	AITSEMI
BSS123N	文件：633.16 Kbytes Page：9 Pages	OptiMOS??Small-Signal-Transistor Features •N-channel •Enhancementmode •Logiclevel(4.5Vrated) •Avalancherated •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant,Halogenfree	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BSS123Q	文件：532.99 Kbytes Page：7 Pages	N-CHANNELENHANCEMENTMODEMOSFET Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS123Qissuitableforautomotiveapplicat	DIODESDiodes Incorporated 达尔科技	DIODES
BSS123W	文件：455.1 Kbytes Page：4 Pages	N-ChannelMOSFET FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable APPLICATION SmallServoMotorControls PowerMOSFETGateDrivers SwitchingApplication	GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司	GWSEMI
BSS123W	文件：1.07264 Mbytes Page：9 Pages	N-ChannelEnhancementModeMOSFET	FUTUREWAFER FutureWafer Tech Co.,Ltd	FUTUREWAFER
BSS123W	文件：2.06458 Mbytes Page：5 Pages	SOT-323Plastic-EncapsulateMOSFETS FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable	DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司	DGNJDZ
BSS123W	文件：216.64 Kbytes Page：6 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
BSS123W	文件：67.49 Kbytes Page：3 Pages	N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInp	DIODESDiodes Incorporated 达尔科技	DIODES
BSS123W	文件：92.42 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR	DIODESDiodes Incorporated 达尔科技	DIODES
BSS123W	文件：152.36 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •HighDrain-SourceVoltageRating •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice,Note3and4	DIODESDiodes Incorporated 达尔科技	DIODES
BSS123WQ	文件：419.64 Kbytes Page：5 Pages	N-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpe	DIODESDiodes Incorporated 达尔科技	DIODES
BUL123S	文件：788.44 Kbytes Page：6 Pages	SiliconNPNtransistorinaTO-92PlasticPackage.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
BYD123	文件：65.2 Kbytes Page：8 Pages	Ultrafastlow-lossrectifier DESCRIPTION CavityfreecylindricalglassSOD81packagethroughImplotec™technology.Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES •Glasspassivated •Highmaximumoperatingtemperature •Lowleakagecur	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
CD123D-B	文件：170.46 Kbytes Page：6 Pages	CD123D-B1xRSchottkyBarrierChipDiodeSeries Features ■RoHScompliant* ■Leadlesschipform ■Highcurrentcapability ■Lowforwardvoltage ■Halogenfree** Applications ■SwitchModePowerSupplies(SMPS) ■Portableequipmentbatteries ■Highfrequencyrectification ■DC/DCconverters ■Telecommunications	BournsBourns Inc. 伯恩斯（邦士）	Bourns
CEP123	文件：243.92 Kbytes Page：1 Pages	POWERINDUCTORS(SMDType)	SUMIDA Sumida America Components Inc.	SUMIDA

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市川蓝电子科技有限公司	BSS123I	INFINEON	23+	PG-SOT23-3	14253	原包装原标现货,假一罚十,	询价
深圳市集粒科技有限公司	BSS123I	INFINEON	21+		230		询价
深圳市得捷芯城科技有限公司	BSS123I	Infineon(英飞凌)	23+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市雅芯通科技有限公司	BSS123I	INFINEON/英飞凌	24+	N/A	5000	只做原装正品现货	询价
深圳市星辰微电科技有限公司	BSS123I	Infineon	23+	PG-SOT23-3	15500	英飞凌优势渠道全系列在售	询价
深圳市南煜科技有限公司	BSS123I	Infineon	22+		7422	原装正品优势现货!	询价
深圳市维尔达电子有限公司	BSS123INTR-ND	INFINEON	2023+		80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市博正芯科技有限公司	BSS123IXTSA1	Infineon Technologies	21+	PG-SOT-23-3	5000	INFINEON专卖,进口原装深圳现货	询价
深圳市威尔健半导体有限公司	BSS123IC	FAIRCHILD/仙童	23+	SOT-23	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	BSS123IC	FAIRCHILD/仙童	2022	SOT-23	80000	原装现货,OEM渠道,欢迎咨询	询价

更多BSS123I供应商更新时间2024-6-3 10:04:00

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