Technische Information / Technical Information

This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.

文件：82.28 Kbytes 页数：8 Pages

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IGBT Power Module

IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate

文件：208.09 Kbytes 页数：11 Pages

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IGBT Power Module

IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate

文件：208.09 Kbytes 页数：11 Pages

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HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

Infineon

英飞凌

IGBT-Modules

IGBT-Modules

文件：173.09 Kbytes 页数：9 Pages

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IGBT Power Module

• Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 6.8 Ohm

文件：324.15 Kbytes 页数：10 Pages

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IGBT Power Module

• Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 6.8 Ohm

文件：324.15 Kbytes 页数：10 Pages

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62mm C-series module with low loss IGBT2 and EmCon diode

62mm C-series module with low loss IGBT2 and EmCon diode

文件：338.18 Kbytes 页数：10 Pages

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IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate)

IGBT Power Module • Single switch with chopper diode • Package with insulated metal base plate

文件：76.86 Kbytes 页数：5 Pages

SIEMENS

西门子

英飞凌IGBT BSM200GA120DLC

文件：84.537 Kbytes 页数：8 Pages

Infineon

英飞凌

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