BS

型号：2PB709AS；Package：SC-59；PNP general purpose transistor

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BS

型号：2SB709AS；Package：SOT-23；Power Dissipation

●FEATURES PowerDissipation PCM:0.2W(Tamb=25°C)

BS

型号：2SC2412/K-S；Package：SOT-23；NPN Transistors

Features ●LowCob.Cob=2.0pF(Typ.)

BS

型号：2SC2412K-S；Package：SOT-23；NPN Transistors

Features ●LowCob.Cob=2.0pF(Typ.)

BS

型号：2SC4081-S；Package：SOT-323；NPN Transistor

■Features ●LowCob.Cob=2.0pF(Typ.) ●Complementaryto2SA1576A

BS

型号：2SC4617S；Package：SOT-523；Plastic-Encapsulate Transistors

FEATURES ●LowCob:Cob=2.0pF(Typ) ●Complementto2SA1774

BS

型号：AH3242Q；Package：SC59；TWO-WIRE AUTOMOTIVE HALL SWITCHES INTEGRATED SELF-DIAGNOSTICS

Features Unipolar:AH3241Q,AH3242Q,AH3243Q,AH3244Q Latch:AH3280Q,AH3281Q,AH3282Q OutputPolarity: Direct:AH3242Q,AH3243Q Inverted:AH3241Q,AH3244Q WideSupplyVoltageOperation:2.7Vto27V TemperatureCoefficient-1100ppm/°C (AH3242Q,AH3243Q,AH3244Q) ChopperSt

BS

型号：BC52PA；Package：HUSON3；60 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BS

型号：BC52PA-Q；Package：SOT1061；60 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorsinanultrathinSOT1061leadlesssmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalan

BS

型号：BCM856BS；Package：SC-88；PNP/PNP matched double transistors

Features *Currentgainmatching *Base-emittervoltagematching *Drop-inreplacementforstandarddoubletransistors *AEC-Q101qualified