丝印：BR4；Package：SOT89；80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43 2. Features and benefits • High current • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • AEC-Q101 qua

文件：181.8 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BR4；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Voltage High Current Complement to BSR43 AAPLICATIONS Medium Power Transistor

文件：1.73804 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BR4；Package：SOT89；80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43-Q 2. Features and benefits • High current • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Qualified

文件：181.31 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BR4；Package：SOT89；80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features  BVCEO > -80V  IC = -1A High Continuous Current  Low saturation voltage VCE(sat)

文件：293.75 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BR4；Package：SOT89；80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features  BVCEO > -80V  IC = -1A High Continuous Current  Low saturation voltage VCE(sat)

文件：293.75 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BR4；Package：SMA；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

文件：210.65 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BR4；Package：SOT-89；GENERAL PURPOSE TRANSISTOR

文件：251.12 Kbytes 页数：3 Pages

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

丝印：BR40NS40A；Package：TO-263S；Schottky Barrier Diode

●Features High reliability Power mold type Cathode common dual type Low VF ●Application Switching power supply

文件：1.25424 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：BR4Y；Package：SMB；Automotive ultrafast recovery diode

文件：163.98 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

4.0kV 1.0A HIGH VOLTAGE DIODES

文件：68.92 Kbytes 页数：1 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特电子广州市格特电子有限公司