BLF6G21-10G数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.

特性 Features

• Easy power control\r
• Integrated ESD protection\r
• Excellent ruggedness\r
• High efficiency\r
• Excellent thermal stability\r
• No internal matching for broadband operation.\r
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

应用 Application

• RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations\r
• Broadcast drivers\r
• Multicarrier applications in the HF to 2200 MHz frequency range

简介

BLF6G21-10G属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF6G21-10G晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。