Power LDMOS transistor

General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Features and benefits ■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: ◆ Average output power =

文件：90.32 Kbytes 页数：11 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

文件：195.64 Kbytes 页数：12 Pages

PHI

飞利浦

Power LDMOS transistor

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. • Easy power control\r\n• Integrated ESD protection\r\n• Excellent ruggedness\r\n• High efficiency\r\n• Excellent thermal stability\r\n• No internal matching for broadband operation.\r\n• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安谱隆

Power LDMOS transistor

恩XP

Package：SOT-538A；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 18.5DB SOT538A

Ampleon USA Inc.

Package：SOT-538A；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 18.5DB SOT538A

Ampleon USA Inc.