BLF6G21-10G分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

厂商型号	BLF6G21-10G
参数属性	BLF6G21-10G 封装/外壳为SOT-538A；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为分立半导体产品的晶体管-FETMOSFET-射频；产品描述：RF FET LDMOS 65V 18.5DB SOT538A
功能描述	Power LDMOS transistor
封装外壳	SOT-538A
文件大小	90.32 Kbytes
页面数量	11 页
生产厂商	恩XP
原厂标识	恩XP
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-1 18:05:00
人工找货	BLF6G21-10G价格和库存，欢迎联系客服免费人工找货

General description

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz

Features and benefits

■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,

a supply voltage of 28 V and an IDq of 100 mA:

◆ Average output power = 0.7 W

◆ Gain = 18.5 dB

◆ Efficiency = 15

◆ ACPR = 50 dBc

■ Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,

a supply voltage of 28 V and an IDq of 100 mA:

◆ Average output power = 2 W

◆ Gain = 19.3 dB

◆ Efficiency = 31

◆ ACPR = 39 dBc

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ No internal matching for broadband operation

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and

multi carrier applications in the HF to 2200 MHz frequency range

■ Broadcast drivers