BLF6G20LS-180RN分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

General description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

特性 Features

■ Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:

♦ Average output power = 40 W

♦ Power gain = 17.2 dB

♦ Efficiency = 27

♦ IMD3 = −41 dBc

■ ACPR = −38 dBc

■ Easy power control

■ Integrated ESD protection

■ Enhanced ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (1800 MHz to 2000 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range