BLF6G10LS-160RN数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

General description
160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

特性 Features

Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA:
  Average output power = 32 W
  Power gain = 22.5 dB
  Efficiency = 27 %
  ACPR = −41 dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)