BLF642数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF
BLF642规格书详情
描述 Description
General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.Features and benefits
CW performance at 1300 MHz, a drain-source voltage VDSof 32 V and a quiescent drain current IDq=0.2A :
Average output power = 35 W
Power gain = 19 dB
Drain efficiency = 63 %
2-tone performance at 1300 MHz, a drain-source voltage VDSof 32 V and a quiescent drain current IDq=0.2A :
Average output power = 17.5 W
Power gain = 19 dB
Drain efficiency = 48 %
Intermodulation distortion = 28 dBc
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
技术参数
- 产品编号：
BLF642,112
- 制造商：
ETC
- 类别：
分立半导体产品 > 晶体管 - FET，MOSFET - 射频
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 晶体管类型：
LDMOS
- 频率：
1.3GHz
- 增益：
19dB
- 功率 - 输出：
35W
- 封装/外壳：
SOT-467C
- 供应商器件封装：
SOT467C
- 描述：
RF MOSFET LDMOS 32V SOT467C
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
恩XP |
25+ |
SMD |
10 |
原装正品,假一罚十! |
询价 | ||
恩XP |
23+ |
TO-63 |
25332 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
恩XP |
23+ |
9865 |
原装正品,假一赔十 |
询价 | |||
恩XP |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
询价 | ||
恩XP |
23+ |
TSSOP |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
恩XP |
20+ |
NA |
1000 |
全新原装现货,一片也是批量价。 |
询价 | ||
恩XP |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
恩XP |
2511 |
4945 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | |||
恩XP |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |
