BLF642中文资料Broadband power LDMOS transistor数据手册恩XP规格书

描述 Description

General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.Features and benefits
CW performance at 1300 MHz, a drain-source voltage VDSof 32 V and a quiescent drain current IDq=0.2A :
Average output power = 35 W
Power gain = 19 dB
Drain efficiency = 63 %
2-tone performance at 1300 MHz, a drain-source voltage VDSof 32 V and a quiescent drain current IDq=0.2A :
Average output power = 17.5 W
Power gain = 19 dB
Drain efficiency = 48 %
Intermodulation distortion = 28 dBc
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)