BLF578数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

特性 Features

Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

应用 Application

Industrial, scientific and medical applications
Broadcast transmitter applications

简介

BLF578属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF578晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。