VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange package, with two ceramic caps. The mounting flange provides

文件：90.33 Kbytes 页数：2 Pages

ELEFLOW

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. The transistor is encapsulated in a 6-lead, SOT

文件：85.95 Kbytes 页数：13 Pages

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VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES • High power gain • Easy power control • Gold metallization ensures excellent reliability • Good thermal stability •

文件：101.83 Kbytes 页数：13 Pages

PHI

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VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES • High power gain • Easy power contr

文件：179.2 Kbytes 页数：21 Pages

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VHF POWER MOSFET

DESCRIPTION: The ASI BLF278 is a Dual Common Source N-Channel EnhancementMode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

文件：103.27 Kbytes 页数：7 Pages

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VHP push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES • High power gain • Easy power contr

文件：129.62 Kbytes 页数：3 Pages

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