Axial Lead and Cartridge Fuses - Midget

文件：78.82 Kbytes 页数：1 Pages

Littelfuse

力特

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap. FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Communications transm

文件：76.98 Kbytes 页数：16 Pages

PHI

飞利浦

UHF push-pull power LDMOS transistor

DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on un

文件：96.23 Kbytes 页数：7 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A – Output power = 20 W (AV) – Gain = 12 dB – Efficiency = 19 – ACPR = −42 dBc at 3.84

文件：50.75 Kbytes 页数：8 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 mA: – Output power = 3.5 W (AV) – Gain = 12.9 dB – Efficiency = 16.5 – ACPR = −45 dBc

文件：105.21 Kbytes 页数：12 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed for broadband

文件：81.97 Kbytes 页数：6 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A: – Output power = 7.5 W (AV) – Gain = 12.5 dB – Efficiency = 20 – ACPR = −42 dBc at 3.

文件：111.93 Kbytes 页数：12 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA: – Output power = 11.5 W (AV) – Gain = 12.5 dB – Efficiency = 20 – ACPR = −42 dBc a

文件：112.3 Kbytes 页数：12 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

文件：48.77 Kbytes 页数：8 Pages

PHI

飞利浦