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BLF2045

UHF power LDMOS transistor

DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. FEATURES • Typical 2-tone performance at a supply voltage of 26V and IDQ of 500 mA - Output power =30W (PEP) - Gain = 12.5 dB - Efficiency = 32 - dlm = -26dBc • Easy

文件:130.16 Kbytes 页数:4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLF2045

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

文件:133.78 Kbytes 页数:11 Pages

PHI

PHI

PHI

BLF2047

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim

文件:101.51 Kbytes 页数:12 Pages

PHI

PHI

PHI

BLF2047L

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli

文件:93.63 Kbytes 页数:12 Pages

PHI

PHI

PHI

BLF2048

UHF push-pull power LDMOS transistor

DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on un

文件:140.74 Kbytes 页数:12 Pages

PHI

PHI

PHI

BLF2012LL98R2400A

2012 2.4-2.5GHz Combo

文件:531.73 Kbytes 页数:5 Pages

PULSE

BLF2012LL98R2400A

WIRELESS COMPONENTS

文件:435.65 Kbytes 页数:5 Pages

YAGEO

国巨

BLF2012LM31R2400A

WIRELESS COMPONENTS

文件:377.61 Kbytes 页数:5 Pages

YAGEO

国巨

BLF2012LM37R2400A

Combo

文件:363.51 Kbytes 页数:5 Pages

YAGEO

国巨

BLF202_15

HF/VHF power MOS transistor

文件:90.51 Kbytes 页数:16 Pages

JMNIC

锦美电子

技术参数

  • 插入损耗(最大值):

    3.8dB

  • 相位差:

    180°@±10°

供应商型号品牌批号封装库存备注价格
256
正品原装--自家现货-实单可谈
询价
恩XP
24+
2-LDMOSTSOT467C
112
询价
恩XP
23+
高频管
5000
原装正品,假一罚十
询价
25+
2789
全新原装自家现货!价格优势!
询价
恩XP
24+
SMD
5500
长期供应原装现货实单可谈
询价
PHI
23+
TO63
8650
受权代理!全新原装现货特价热卖!
询价
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
恩XP
2018+
26976
代理原装现货/特价热卖!
询价
PHLILIPS
15+
SMD
6698
询价
INFINEON
19+
MODL
20000
1
询价
更多BLF20供应商 更新时间2026-3-16 10:20:00