| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
UHF power LDMOS transistor DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. FEATURES • Typical 2-tone performance at a supply voltage of 26V and IDQ of 500 mA - Output power =30W (PEP) - Gain = 12.5 dB - Efficiency = 32 - dlm = -26dBc • Easy 文件:130.16 Kbytes 页数:4 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el 文件:133.78 Kbytes 页数:11 Pages | PHI PHI | PHI | ||
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim 文件:101.51 Kbytes 页数:12 Pages | PHI PHI | PHI | ||
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli 文件:93.63 Kbytes 页数:12 Pages | PHI PHI | PHI | ||
UHF push-pull power LDMOS transistor DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on un 文件:140.74 Kbytes 页数:12 Pages | PHI PHI | PHI | ||
2012 2.4-2.5GHz Combo 文件:531.73 Kbytes 页数:5 Pages | PULSE | PULSE | ||
WIRELESS COMPONENTS 文件:435.65 Kbytes 页数:5 Pages | YAGEO 国巨 | YAGEO | ||
WIRELESS COMPONENTS 文件:377.61 Kbytes 页数:5 Pages | YAGEO 国巨 | YAGEO | ||
Combo 文件:363.51 Kbytes 页数:5 Pages | YAGEO 国巨 | YAGEO | ||
HF/VHF power MOS transistor 文件:90.51 Kbytes 页数:16 Pages | JMNIC 锦美电子 | JMNIC |
技术参数
- 插入损耗(最大值):
3.8dB
- 相位差:
180°@±10°
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
256 |
正品原装--自家现货-实单可谈 |
询价 | |||||
恩XP |
24+ |
2-LDMOSTSOT467C |
112 |
询价 | |||
恩XP |
23+ |
高频管 |
5000 |
原装正品,假一罚十 |
询价 | ||
25+ |
2789 |
全新原装自家现货!价格优势! |
询价 | ||||
恩XP |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
询价 | ||
PHI |
23+ |
TO63 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
恩XP |
2018+ |
26976 |
代理原装现货/特价热卖! |
询价 | |||
PHLILIPS |
15+ |
SMD |
6698 |
询价 | |||
INFINEON |
19+ |
MODL |
20000 |
1 |
询价 |
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