UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

文件：48.77 Kbytes 页数：8 Pages

PHI

PHI

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

文件：133.78 Kbytes 页数：11 Pages

PHI

PHI

UHF power LDMOS transistor

DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. FEATURES • Typical 2-tone performance at a supply voltage of 26V and IDQ of 500 mA - Output power =30W (PEP) - Gain = 12.5 dB - Efficiency = 32 - dlm = -26dBc • Easy

文件：130.16 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim

文件：101.51 Kbytes 页数：12 Pages

PHI

PHI

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli

文件：93.63 Kbytes 页数：12 Pages

PHI

PHI

UHF push-pull power LDMOS transistor

DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on un

文件：140.74 Kbytes 页数：12 Pages

PHI

PHI

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES • E

文件：69.98 Kbytes 页数：12 Pages

PHI

PHI

Power LDMOS transistor

General description 200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Designed for broadband operation (2300 MHz t

文件：828.3 Kbytes 页数：11 Pages

AMPLEON

安谱隆

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES •

文件：147.01 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES •

文件：81.13 Kbytes 页数：11 Pages

PHI

PHI