Axial Lead and Cartridge Fuses - Midget

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Littelfuse

力特

Axial Lead and Cartridge Fuses

Axial Lead and Cartridge Fuses Laminated Body Fast-Acting Type BLF Series Fibre Body Fast-Acting Type BLN Series

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Littelfuse

力特

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap. FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Communications transm

文件：76.98 Kbytes 页数：16 Pages

PHI

飞利浦

UHF push-pull power LDMOS transistor

DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on un

文件：96.23 Kbytes 页数：7 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A – Output power = 20 W (AV) – Gain = 12 dB – Efficiency = 19 – ACPR = −42 dBc at 3.84

文件：50.75 Kbytes 页数：8 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 mA: – Output power = 3.5 W (AV) – Gain = 12.9 dB – Efficiency = 16.5 – ACPR = −45 dBc

文件：105.21 Kbytes 页数：12 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed for broadband

文件：81.97 Kbytes 页数：6 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A: – Output power = 7.5 W (AV) – Gain = 12.5 dB – Efficiency = 20 – ACPR = −42 dBc at 3.

文件：111.93 Kbytes 页数：12 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA: – Output power = 11.5 W (AV) – Gain = 12.5 dB – Efficiency = 20 – ACPR = −42 dBc a

文件：112.3 Kbytes 页数：12 Pages

PHI

飞利浦