丝印：7；Package：PG-TSNP-6-2；Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications

1 Features  Operation frequencies: 1164 to 1300 MHz  Ultra low current consumption: 1.3 mA  Wide supply voltage range: 1.1 V to 2.8 V  High insertion power gain: 20.0 dB  Low noise figure: 0.80 dB  2 kV HBM ESD protection (inluding AI pin)  Only one external matching component needed

文件：791.38 Kbytes 页数：13 Pages

Infineon

英飞凌

Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications

1 Features  Operation frequencies: 1164 to 1300 MHz  Ultra low current consumption: 1.3 mA  Wide supply voltage range: 1.1 V to 2.8 V  High insertion power gain: 20.0 dB  Low noise figure: 0.80 dB  2 kV HBM ESD protection (inluding AI pin)  Only one external matching component needed

文件：791.38 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：A1；Package：SOT-343R；Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current, low voltage • Very high power gain • Low noise figure • Integrated temperature

文件：94.07 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：A1；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：A3；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：A3；Package：SOT-343R；Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Con

文件：100.4 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：A5*；Package：SOT-363；900 MHz high linear low noise amplifier

DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package. FEATURES • Low current, low voltage • High linearity • High power gain •

文件：83.75 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：A5*；Package：SOT-363；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：A6-；Package：SOT-363；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP