丝印：A5*；Package：SOT-363；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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丝印：A6-；Package：SOT-363；1900 MHz high linear low noise amplifier

DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package. FEATURES • Low current, low voltage • High linearity • High power gain •

文件：85.5 Kbytes 页数：12 Pages

PHI

PHI

丝印：A6-；Package：SOT-363；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：A2p；Package：SOT-363；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：A2p；Package：SOT-363；MMIC mixer

DESCRIPTION Silicon double poly MMIC mixer in a 6-lead plastic SOT363 package. FEATURES • Large frequency range: – Cellular band (900 MHz) – PCS band (1900 MHz) – WLAN band (2.4 GHz). • High isolation • High linearity • High conversion gain. APPLICATIONS Receiver side of

文件：48.33 Kbytes 页数：8 Pages

PHI

PHI

MMIC variable gain amplifier

DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) 2 stage variable gain amplifier in double polysilicon technology in a 5-pin SOT551A plastic SMD package for low voltage medium power applications. FEATURES • High gain • Excellent adjacent channel power rejection • Small SMD pa

文件：67.43 Kbytes 页数：12 Pages

PHI

PHI

MMIC variable gain amplifier

DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) 2 stage variable gain amplifier in double polysilicon technology in a 6-pin SOT363 SMD plastic package for low voltage medium power applications. FEATURES • High gain • Excellent adjacent channel power rejection • Small SMD pac

文件：315.34 Kbytes 页数：11 Pages

恩XP

MMIC variable gain amplifier

DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) 2 stage variable gain amplifier in double polysilicon technology in a 6-pin SOT363 SMD plastic package for low voltage medium power applications. FEATURES • High gain • Excellent adjacent channel power rejection • Small SMD pac

文件：315.34 Kbytes 页数：11 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：E3-；Package：SOT-363；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP