丝印：E3-；Package：SOT-363；MMIC wideband amplifier

DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched to 50 Ω • Very wide frequency range (3.6 GHz at 3 dB bandwidth) • Flat 23 dB gain (DC to 2.6 GHz at 1 dB fl

文件：86.71 Kbytes 页数：12 Pages

PHI

PHI

丝印：G2-；Package：SOT-363；MMIC wideband amplifier

DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched to 50Ω • Very wide frequency range • Very flat gain • Unconditionally stable. APPLICA

文件：78.01 Kbytes 页数：12 Pages

PHI

PHI

丝印：G2-；Package：SOT-363；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：E2-；Package：SOT-363；MMIC wideband amplifier

DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched to 50 Ω • Wide frequency range (3.2 GHz at 3 dB bandwidth) • Flat 21 dB gain (DC to 2.6 GHz at

文件：83.6 Kbytes 页数：12 Pages

PHI

PHI

丝印：E2-；Package：SOT-363；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

MMIC wideband amplifier

General description Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. Features ■ Internally matched to 50 Ω ■ Wide frequency range (2.7 GHz at 3 dB gain bandwidth) ■ Flat 21 dB gain (± 1 dB from DC up

文件：100.94 Kbytes 页数：15 Pages

恩XP

MMIC wideband amplifier

General description Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. Features ■ Internally matched to 50 Ω ■ Wide frequency range (2.7 GHz at 3 dB gain bandwidth) ■ Flat 21 dB gain (± 1 dB from DC up

文件：93.39 Kbytes 页数：15 Pages

PHI

PHI

MMIC wideband amplifier

General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. Features ■ Internally matched to 50 Ω ■ Wide frequency range (3.3 GHz at 3 dB bandwidth) ■ Flat 22 dB gain (±1 dB up to 2.8 GHz)

文件：88.3 Kbytes 页数：14 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP