丝印：E2-；Package：SOT-363；MMIC wideband amplifier

DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched to 50 Ω • Wide frequency range (3.2 GHz at 3 dB bandwidth) • Flat 21 dB gain (DC to 2.6 GHz at

文件：83.6 Kbytes 页数：12 Pages

PHI

PHI

丝印：E2-；Package：SOT-363；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

MMIC wideband amplifier

Overview Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internalmatching circuit in a 6-pin SOT363 plastic SMD package. 5 dBm saturated output power at 1 GHz\nGood linearity\nInternally matched to 50 Ω\nVery wide frequency range (3.2 GHz at 3 dB bandwidth)\nFlat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)\nUnconditionally stable (K > 1.5);

恩XP

SILICON PLANAR EPITAXIAL TRANSISTOR

SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package N-P-N transistor

文件：38.78 Kbytes 页数：3 Pages

CDIL

SILICON PLANAR EPITAXIAL TRANSISTOR

SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package N-P-N transistor

文件：38.78 Kbytes 页数：3 Pages

CDIL

SILICON PLANAR EPITAXIAL TRANSISTOR

SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package N-P-N transistor

文件：38.78 Kbytes 页数：3 Pages

CDIL