丝印：PGs；Package：SOT-363；BGA428 High Gain, Low Noise Amplifier

Silicon Germanium Broadband MMIC Amplifier Feature • High gain, GMA = 20 dB at 1.8 GHz • Low noise figure, NF = 1.4 dB at 1.8 GHz • Prematched • Ideal for GSM, DCS1800, PCS1900 • Open collector output • Typical supply voltage: 2.4 - 3 V • SIEGET®-45 technology • Pb-free (RoHS compliant) p

文件：482.87 Kbytes 页数：9 Pages

INFINEON

英飞凌

A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs

Description The BGA430 is a broad band high gain amplifier based upon Infineon Technologies’ Silicon Bipolar Technology B6HF. Housed in a small SOT363 package this Silicon Monolithic Microwave Integrated Circuit (MMIC) requires very few external components due to the integrated biasing concept.

文件：724.48 Kbytes 页数：24 Pages

INFINEON

英飞凌

Silicon Germanium GPS Low Noise Amplifier

Features • Optimized for 1575 MHz Operation • High gain: 19.5 dB • Low Noise Figure: 1.1 dB • Supply voltage: 2.4 V to 3.2 V • 4mA current consumption • Power off function • 1 kV HBM ESD protection at all pins • B7HFM Silicon Germanium technology • RF output internally matched to 50 Ω •

文件：76.13 Kbytes 页数：8 Pages

INFINEON

英飞凌

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：3A；Package：SOT-89；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：4A；Package：SOT-89；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：5A；Package：SOT-89；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP