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BGA7351

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BGA855N6

丝印:6;Package:TSNP-6-10;Low Noise Amplifier for Lower L-Band GNSS Applications

1 Features • Insertion power gain: 17.8 dB • Low noise figure: 0.60 dB • Low current consumption: 4.8mA • High linearity performance IIP3: 0 dBm • Operating frequencies: 1164 - 1300 MHz • Supply voltage: 1.1 V to 3.3 V • Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2) • B

文件:477.48 Kbytes 页数:13 Pages

INFINEON

英飞凌

BGA9H1MN9

丝印:H;Package:TSNP-9-2;Mid- and High-Band Low Noise Amplifier with Gain Steps and MIPI Control

1 Features  Power gain: 20.2 dB  Low noise figure: 0.6 dB  Low current consumption: 5.8mA  Frequency range from 1.4 to 2.7 GHz  Supply voltage: 1.1 to 2.0 V  Integrated MIPI RFFE interface operating in 1.65 to 1.95 V voltage range  Soware programmable MIPI RFFE USID  USID select p

文件:663.59 Kbytes 页数:21 Pages

INFINEON

英飞凌

BGA9H1MN9E6329XTSA1

Mid- and High-Band Low Noise Amplifier with Gain Steps and MIPI Control

1 Features  Power gain: 20.2 dB  Low noise figure: 0.6 dB  Low current consumption: 5.8mA  Frequency range from 1.4 to 2.7 GHz  Supply voltage: 1.1 to 2.0 V  Integrated MIPI RFFE interface operating in 1.65 to 1.95 V voltage range  Soware programmable MIPI RFFE USID  USID select p

文件:663.59 Kbytes 页数:21 Pages

INFINEON

英飞凌

BGAP3D30H

丝印:BP3D3H;Pre-Driver for Wireless Infrastructure Applications

Features • Operation frequency range: 3100 to 4200 MHz • High gain: 38.5 dB • High output P1dB: 31 dBm • High ACLR: 47 dBc • Adjustable bias current (via external resistor) • Fast switching for TDD support • 100Ω differential input • 5V supply voltage • 24 pins leadless QFN package (4.0 x

文件:532.48 Kbytes 页数:11 Pages

INFINEON

英飞凌

BGA123L4

Small Footprint Ultra Low Current Low Noise Amplifier

文件:285.51 Kbytes 页数:13 Pages

INFINEON

英飞凌

BGA150FR

GDT Array

文件:169.33 Kbytes 页数:3 Pages

BENCENT

槟城电子

BGA2031/1

丝印:A3-;Package:SOT-363;MMIC variable gain amplifier

文件:315.34 Kbytes 页数:11 Pages

PHI

PHI

PHI

BGA2031_1

MMIC variable gain amplifier

文件:315.34 Kbytes 页数:11 Pages

PHI

PHI

PHI

BGA2031SLASH1

丝印:A3-;Package:SOT-363;MMIC variable gain amplifier

文件:315.34 Kbytes 页数:11 Pages

PHI

PHI

PHI

技术参数

  • VBR.MIN(V):

    14.40

  • VBR.MAX(V):

    15.90

  • IT(mA):

    1

  • IR(μA):

    1

  • VRWM(V):

    13.0

  • IPP(A):

    18.60

  • VC(V):

    21.5

供应商型号品牌批号封装库存备注价格
UN SEMICONDUCTOR
24+
con
10000
查现货到京北通宇商城
询价
硕凯SOCAY
25+
DIP
5000
国产替换现货降本
询价
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
询价
VISHAY
11+
DO-214AC
8000
全新原装,绝对正品现货供应
询价
VISHAYMAS
25+23+
DO-214AC
51446
绝对原装正品现货,全新深圳原装进口现货
询价
优恩半导体
21+
DO-214AC/SMA
100
只做原装鄙视假货15118075546
询价
更多BGA供应商 更新时间2026-3-18 14:00:00