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BGA2002

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BGA2002,115

包装:卷带(TR) 封装/外壳:SC-82A,SOT-343 类别:RF/IF,射频/中频和 RFID 射频放大器 描述:IC RF AMP GP 0HZ-2.2GHZ CMPAK-4

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

ACM2002C

ACM2002CSERIESLCDMODULE

PHYSICALDATA NumberofCharacters20charactersx2lines CharacterFormat5x7dotswithcursor OverallModuleSize(WxHxD)116.0x37.0xmax15.0forLEDbacklightversion 116.0x37.0xmax9.5forreflectiveorELback

AZDISPLAYS

AZ Displays

ACM2002D

SPECIFICATIONSFORLIQUIDCRYSTALDISPLAY

ACM2002DSERIESLCDMODULE MECHANICALSPECS 1.OverallModuleSize 116.0mm(W)x37.0mm(H)xmax13.5mm(D)forLEDbacklightversion 116.0mm(W)x37.0mm(H)xmax9.5mm(D)forreflectiveversion 2.DotSize0.60mm(W)x0.65mm(H) 3.DotPitch0.65mm(W)x0.70mm(H) 4.Duty1/16 5.Cont

AZDISPLAYS

AZ Displays

ACM2002E

SPECIFICATIONSFORLIQUIDCRYSTALDISPLAY

ACM2002ESERIESLCDMODULE MECHANICALSPECS 1.OverallModuleSize 116.0mm(W)x37.0mm(H)xmax13.5mm(D)forLEDbacklightversion 116.0mm(W)x37.0mm(H)xmax9.5mm(D)forreflectiveversion 2.DotSize0.60mm(W)x0.65mm(H) 3.DotPitch0.65mm(W)x0.70mm(H) 4.Duty1/16 5.

AZDISPLAYS

AZ Displays

ACM2002E

SPECIFICATIONSFORLIQUIDCRYSTALDISPLAY

ACM2002ESERIESCHARACTERMODULE MECHANICALSPECS 1.OverallModuleSize 116.0mm(W)x37.0mm(H)xmax13.5mm(D)forLEDbacklightversion 116.0mm(W)x37.0mm(H)xmax9.5mm(D)forreflectiveversion 2.ViewingDisplayArea83.0mm(Wx18.6mm(H) 3.DotSize0.60mm(W)x0.65mm(H)

ZETTLERZettler Group

赛特勒赛特勒集团

ACM2002E-FL-GBW

SPECIFICATIONSFORLIQUIDCRYSTALDISPLAY

AZDISPLAYS

AZ Displays

ACM2002EI

LIQUIDCRYSTALDISPLAY

AZDISPLAYS

AZ Displays

ACM2002EI-FL-YBW

LIQUIDCRYSTALDISPLAY

AZDISPLAYS

AZ Displays

ACM2002P

ACM2002PSERIESLCDMODULE

NumberofCharacters:20charactersx2lines CharacterFormat:5x7dotswithcursor

AZDISPLAYS

AZ Displays

ACM2002R

SPECIFICATIONSFORLIQUIDCRYSTALDISPLAY

MECHANICALSPECS 1.OverallModuleSize 180.0mm(W)x40.0mm(H)xmax14.5mm(D)forLEDbacklightversion 180.0mm(W)x40.0mm(H)xmax9.5mm(D)forreflectiveversion 2.DotSize1.12mm(W)x1.12mm(H) 3.DotPitch1.22mm(W)x1.22mm(H) 4.Duty1/16 5.ControllerICKS006

AZDISPLAYS

AZ Displays

ACM2002R

SPECIFICATIONSFORLIQUIDCRYSTALDISPLAY

ACM2002RSERIESCHARACTERMODULEVER1.1 MECHANICALSPECS 1.OverallModuleSize 180.0mm(W)x40.0mm(H)xmax14.5mm(D)forLEDbacklightversion 180.0mm(W)x40.0mm(H)xmax9.5mm(D)forreflectiveversion 2.DotSize1.12mm(W)x1.12mm(H) 3.DotPitch1.22mm(W)x1.22

ZETTLERZettler Group

赛特勒赛特勒集团

AE2002

AutomotiveEthernet

pulse

Pulse Electronics

AHTA-2002S

10/100BaseTDualPortTransformer

ALLIED

Allied Components International

AHTD-2002S

10/100BaseTDualPortTransformer

ALLIED

Allied Components International

AHV2002

SILICONHYPERABRUPTTUNINGVARACTOR

ASI

Advanced Semiconductor, Inc

AML2002

NPNEpitaxialPlanarSiliconTransistorLEDBackLight

NPNEpitaxialPlanarSiliconTransistor Features •VCEO=200V,IC=0.7A •Lowcollector-to-emittersaturationvoltageVCE(sat)=0.125V(typ.)@IC=0.35A •High-speedswitchingtf=70ns(typ.)@IC=0.3A •Theplastic-coveredheatsinkeliminatestheneedforaninsulatorwhenmountingtheAML2002

SANYOSanyo

三洋三洋电机株式会社

AML2002

BipolarTransistor200V,0.7A,LowVCE(sat),NPNSingleTO-126ML

BipolarTransistor 200V,0.7A,LowVCE(sat),NPNSingleTO-126ML Features •VCEO=200V,IC=0.7A •Lowcollector-to-emittersaturationvoltageVCE(sat)=0.125V(typ.)@IC=0.35A •High-speedswitchingtf=70ns(typ.)@IC=0.3A •Theplastic-coveredheatsinkeliminatestheneedforaninsulatorwhenm

ONSEMION Semiconductor

安森美半导体安森美半导体公司

AN2002

UsingtheDemoboardfortheTD350AdvancedIGBTDriver

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

AORN2002ATF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    BGA2002

  • 功能描述:

    射频放大器 1CH 1.3dBm 4.5V 30mA

  • RoHS:

  • 制造商:

    Skyworks Solutions, Inc.

  • 类型:

    Low Noise Amplifier

  • 工作频率:

    2.3 GHz to 2.8 GHz

  • P1dB:

    18.5 dBm

  • 输出截获点:

    37.5 dBm

  • 功率增益类型:

    32 dB

  • 噪声系数:

    0.85 dB

  • 工作电源电压:

    5 V

  • 电源电流:

    125 mA

  • 测试频率:

    2.6 GHz

  • 最大工作温度:

    + 85 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    QFN-16

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
NXP/恩智浦
23+
SOT-343
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
NXP
16+
NA
8800
诚信经营
询价
NEXPERIA
23+
SOT343R
57000
原装正品现货
询价
NXP
21+
SOT343
450
原装现货假一赔十
询价
NXP/恩智浦
21+ROHS
SOT-343
98650
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NXP
10+
SOT343
350
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NXP
10+
SOT343
350
全新原装,支持实单,假一罚十,德创芯微
询价
NXP
589220
16余年资质 绝对原盒原盘 更多数量
询价
NXP
2023+
SOT343
700000
柒号芯城跟原厂的距离只有0.07公分
询价
NXP
2023+
SOT-343
8700
原装现货
询价
更多BGA2002供应商 更新时间2024-5-15 20:00:00