TO-72

PNP Silicon Transistors

文件：68.32 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Silicon RF Transistor

* For low-distorton broadband amplifiers up to 1 GHz at collector currents from 10 mA 10.30 mA.

文件：188.12 Kbytes 页数：5 Pages

SIEMENS

西门子

PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)

PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P (NPN)

文件：57.86 Kbytes 页数：7 Pages

SIEMENS

西门子

PNP Silicon RF Transistor

PNP Silicon RF Transistor ● For broadband amplifiers up to 2 GHz at collector currents up to 20 mA ● Complementary type: BFR 92P (NPN)

文件：79.04 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：W1-；Package：SOT-23；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：W1-；Package：SOT-23；PNP 5 GHz wideband transistor

DESCRIPTION PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very hig

文件：47.93 Kbytes 页数：8 Pages

PHI

飞利浦

PNP 4 GHz wideband transistor

DESCRIPTION Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT92W uses the same crystal as the SOT23 version, BFT92. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATION It is intended as a

文件：91.03 Kbytes 页数：12 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)

PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W (NPN)

文件：56.71 Kbytes 页数：7 Pages

SIEMENS

西门子

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP