丝印：BFT；Package：DO-214AA；1.5SMBJ Transient Voltage Suppressor Diode Series

文件：596.11 Kbytes 页数：6 Pages

Bourns

伯恩斯

丝印：BFT；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

文件：1.08724 Mbytes 页数：5 Pages

SUNMATE

森美特

丝印：BFT；Package：DO-214AB；SMCJ Transient Voltage Suppressor Diode Series

文件：1.12322 Mbytes 页数：5 Pages

YINT

音特电子

丝印：BFT；Package：DO-214AB；TRANSIENT VTAGE SUPPRESSOR

文件：1.77388 Mbytes 页数：5 Pages

CHENDA

辰达半导体

丝印：BFT；Package：SMC；Rating to 200C VBR

文件：1.33523 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：BFT；Package：DO-214AB；Surface Mount Transient Voltage Suppressors (TVS)

文件：1.68702 Mbytes 页数：7 Pages

SOCAY

硕凯股份

丝印：BFT；Package：DO-214AB；Surface Mount Transient Voltage Suppressors

文件：312.25 Kbytes 页数：4 Pages

ANOVA

林朋科技

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 2 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideba

文件：60.99 Kbytes 页数：8 Pages

PHI

飞利浦

NPN 5 GHz wideband transistor

General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. Features ■ Low current consumpt

文件：101.41 Kbytes 页数：11 Pages

PHI

飞利浦