RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Small Signal Transistors

文件：56.45 Kbytes 页数：1 Pages

Central

SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL NPN TRANSISTOR • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available

文件：222.98 Kbytes 页数：3 Pages

TTELEC

SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL NPN TRANSISTOR • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available

文件：222.98 Kbytes 页数：3 Pages

TTELEC

SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL NPN TRANSISTOR • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available

文件：222.98 Kbytes 页数：3 Pages

TTELEC

NPN SILICON TRANSISTOR

FEATURES • FAST SWITCHING • HIGH PULSE POWER APPLICATIONS • POWER SWITCHING CIRCUITS • MOTOR CONTROL

文件：21.21 Kbytes 页数：2 Pages

SEME-LAB

PNP SILICON TRANSISTOR

FEATURES • FAST SWITCHING • HIGH PULSE POWER APPLICATIONS • POWER SWITCHING CIRCUITS • MOTOR CONTROL

文件：21.28 Kbytes 页数：2 Pages

SEME-LAB

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a TO-39 metal package. FEATURES • Low current (max. 500 mA) • High voltage (max. 250 V). APPLICATIONS • High voltage switching and amplification • Industrial and telephone applications.

文件：52.87 Kbytes 页数：8 Pages

PHI

飞利浦

N-channel silicon FET

DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits.

文件：56.68 Kbytes 页数：9 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP