N-channel silicon FET

DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits.

文件：56.68 Kbytes 页数：9 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N沟道FET

SOT23封装N沟道对称平面外延结型场效应晶体管。 可互换的漏极和源极连接\n小型封装;

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SMD

MINI

上传：深圳市鼎欣微电子有限公司

SOT-323-3

恩XP

上传：深圳市粤骏腾电子科技有限公司