丝印：RFs；Package：SOT-363；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package • For orientation in reel see package information below • Ea

文件：60.19 Kbytes 页数：6 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.4 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

文件：53.43 Kbytes 页数：6 Pages

SIEMENS

西门子

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)

NPN Silicon RF Transistor • For low-noise. high-gain broadband amplifiers at collector currents from 0.2 mA to 20 mA • fT = 8 GHz F = 1.2 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

文件：53.41 Kbytes 页数：6 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low-noise. high-gain broadband amplifiers at collector currents from 0.2 mA to 20 mA • fT = 8 GHz F = 1.2 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

文件：62.16 Kbytes 页数：6 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistor in one package • For orientation in reel see package information below • Pb-fr

文件：60.61 Kbytes 页数：6 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

文件：53.71 Kbytes 页数：6 Pages

SIEMENS

西门子

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. FEATURES • Low current consumption • High power gain • Low nois

文件：113.88 Kbytes 页数：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 6 V, IC = 5 mA, f = 900 MHz ·High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 6 V, IC = 20 mA, f = 1 GHz APPLICATIONS ·Designed for wideband applications such as satellite TV tuners,cellular phones, cordless p

文件：195.46 Kbytes 页数：7 Pages

ISC

无锡固电

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP