NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistor in one package • For orientation in reel see package information below • Pb-fr

文件：60.61 Kbytes 页数：6 Pages

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NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

文件：53.71 Kbytes 页数：6 Pages

SIEMENS

西门子

Qualification report according to AEC-Q101 available

文件：566.24 Kbytes 页数：6 Pages

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NPN Silicon RF Transistor

文件：127.27 Kbytes 页数：6 Pages

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低噪声RF 管基

NPN 硅射频晶体管，用于集电极电流为 2 mA 至 30 mA 的低噪声、高增益宽带放大器 • 适用于低噪声、高增益宽带放大器，集电极电流从 2 mA 到 30 mA\n• 一个封装中有两个（电流）内部隔离晶体管\n• 无铅（符合 RoHS 标准）封装;

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NPN Silicon RF Transistor

文件：127.27 Kbytes 页数：6 Pages

Infineon

英飞凌

Qualification report according to AEC-Q101 available

文件：566.24 Kbytes 页数：6 Pages

Infineon

英飞凌