BFS483数据手册Infineon中文资料规格书

描述 Description

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA

特性 Features

·For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
·fT = 8 GHz, F = 0.9 dB at 900 MHz
·Two (galvanic) internal isolated Transistor in one package
·For orientation in reel see package information in datasheet
·Pb-free (RoHS compliant) package
·Qualification report according to AEC-Q101 available

应用 Application

·Wireless Communications
·For amplifier and oscillator applications in RF Front-end