NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition fre

文件：113.71 Kbytes 页数：11 Pages

PHI

PHI

NPN Silicon RF Transistor

Description Ultra high frequency low noise transistor, planar NPN silicon Epitaxial bipolar process. With high power gain, low noise figure, large dynamic range and ideal current characteristics, the use of SOT -323 ultra compact chip package, mainly used in the VHF, UHF and CATV high frequency w

文件：530.28 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：N2；Package：SOT-323；NPN Transistor

FEATURES ♦ Collector Current Capability IC=70mA ♦ Collector Emitter Voltage VCEO=15V ♦ High power gain ♦ Low noise figure ♦ High transition frequency MECHANICAL DATA ♦ Case: SOT-323(SC-70-3)

文件：847.88 Kbytes 页数：7 Pages

YFWDIODE

佑风微

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Low Noise Figure

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz • High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 8 V, lc = 40 mA, f = 1GHz APPLICATIONS • Designed for RF wideband amplifier applications such as satellite TV systems and RF portable

文件：253 Kbytes 页数：7 Pages

ISC

无锡固电

Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz • High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 8 V, lc = 40 mA, f = 1GHz APPLICATIONS • Designed for RF wideband amplifier applications such as satellite TV systems and RF portable

文件：81.52 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency

文件：115 Kbytes 页数：11 Pages

PHI

PHI

Small Signal Transistors

文件：56.45 Kbytes 页数：1 Pages

CENTRAL

Small Signal Transistors

文件：56.45 Kbytes 页数：1 Pages

CENTRAL

2 AMP FAST RECOVERY BRIDGE RECTIFIERS

FEATURES * PRV Ratings from 50to 1000 Voits * Surgo overioad rating to 50 Amps poak * Roliablo low cost moldod plastic construction * Idoal for printed circult board applications * Fastswitching for high officioncy

文件：46.79 Kbytes 页数：1 Pages

DIOTEC

德欧泰克