NPN medium frequency transistor

DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. FEATURES • Low current (max. 30 mA) • Low voltage (max. 20 V). APPLICATIONS • Medium frequency applications in thick and thin-film circuits.

文件：41.75 Kbytes 页数：8 Pages

PHI

PHI

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：174.61 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

NPN medium frequency transistor

DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. FEATURES • IC(max) = 25 mA • VCEO(max) = 20 V. APPLICATIONS • Medium frequency applications in thick and thin-film circuits.

文件：105.94 Kbytes 页数：7 Pages

恩XP

NPN Medium Frequency Transistor

Features ● Low current (max. 30 mA) ● Low Voltage (max. 20 V)

文件：39.53 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：F2；Package：SOT23；NPN medium frequency transistor

FEATURES •IC(max) = 25 mA •VCEO(max) = 20 V. APPLICATIONS •Medium frequency applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package.

文件：284.4 Kbytes 页数：8 Pages

NEXPERIA

安世

npn silicon rf transistor

文件：49.25 Kbytes 页数：2 Pages

SIEMENS

西门子

NPN SILICON RF TRANSISTOR

NPN Silicon RF Transistor BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package (23 A 3 DIN 41 869), intended for use in film circuits. The transistor BFS 20 is marked NA. It is also available upon request with changed terminal sequence (emitter and base terminal int

文件：41.59 Kbytes 页数：2 Pages

SIEMENS

西门子

丝印：G1；Package：SOT23；NPN medium frequency transistor

FEATURES •IC(max) = 25 mA •VCEO(max) = 20 V •Very low feedback capacitance (typ. 350 fF). APPLICATIONS •IF and VHF thick and thin-film circuit applications. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package.

文件：284.24 Kbytes 页数：7 Pages

NEXPERIA

安世

Plastic-Encapsulate Transistor

FEATURES High Fequency Application. VHF Band Amplifier application RoHS Compliant Product Power dissipation PCM : 0.25 W Collector Current ICM : 25mA Collector-base voltage V(BR)CBO : 30 V Operating & storage junction temperature

文件：104.65 Kbytes 页数：1 Pages

SECOS

喜可士

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor High frequency transistor for IF and VHF applications

文件：82.01 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体