BFQ67R

Marking：R67；Package：SOT-23；Silicon NPN Planar RF Transistor

Features •Smallfeedbackcapacitance •Lownoisefigure •Hightransitionfrequency •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC    andWEEE2002/96/EC Applications    Lownoisesmallsignalamplifiersupto2GHz.This    transistorhassuperiornoisefigur

BFQ67T

NPN 8 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT416(SC-75)package. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability •SOT416(SC-75)envelope. APPLICATIONS WidebandapplicationssuchassatelliteTVtunersandRF

BFQ67W

Marking：WV2；Package：SOT-323；Silicon NPN Planar RF Transistor

Features •Smallfeedbackcapacitance •Lownoisefigure •Hightransitionfrequency •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC    andWEEE2002/96/EC Applications    Lownoisesmallsignalamplifiersupto2GHz.This    transistorhassuperiornoisefigur

BFQ67W

NPN 8 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisdesignedforwidebandapplicationssuchassatelliteTVtunersandRFportablecommunicationsequipmentupto2GHz. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellen

BFQ67W

Silicon NPN transistor in a SOT-323 Plastic Package

Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features Smallfeedbackcapacitance,lownoisefigure,highfT. Applications Lownoisesmallsignalamplifiersupto2GHZ.

BFQ68

NPN 4 GHz wideband transistor

DESCRIPTION NPNtransistormountedinafour-leaddual-emitterSOT122Aenvelopewithaceramiccap.Allleadsareisolatedfromthestud.Diffusedemitter-ballastingresistorsandtheapplicationofgoldsandwichmetallizationensureanoptimumtemperatureprofileandexcellentreliabilityproper

BFQ69

NPN Silicon RF Transistor

NPNSiliconRFTransistor ●Forlow-noisebroadbandamplifiersinantennaandtelecommunicationssystemsatcollectorcurrentsfrom1mAto25mA.

BFQ70

NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)

NPNSiliconRFTransistor ●Forlow-noiseIFandbroadbandamplifiersinantennaandtelecommunicationssystemsatcollectorcurrentsfrom2mAto20mA. ●Hermeticallysealedceramicpackage ●HiRel/Milscreeningavailable.

BFQ71

NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)

NPNSiliconRFTransistor ●Forbroadbandamplifiersupto2GHzandfastnon-saturatedswitchesatcollectorcurrentsfrom1mAto20mA. ●Hermeticallysealedceramicpackage. ●HiRel/Milscreeningavailable. ●CECC-typeavailable:CECC50002/260.

BFQ72

NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)

NPNSiliconRFTransistor ●Forlow-distortionbroadbandamplifiersupto2GHzatcollectorcurrentsfrom10mAto30mA. ●Hermeticallysealedceramicpackage. ●HiRel/Milscreeningavailable. ●CECC-typeavailable:CECC50002/263.