NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud. It is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ba

文件：73.1 Kbytes 页数：10 Pages

PHI

PHI

NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT37 envelops, intended for wideband amplification applications. The device features high output voltage capabilities. A SOTS5 (TO-39) version (ref: ON4497) Is available on request.

文件：521.7 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN RF Transistor

DESCRIPTION ·High Gain ·High Output Voltage ·Low Noise APPLICATIONS ·Designed for use in VHF, UHF and CATV amplifiers.

文件：120.15 Kbytes 页数：3 Pages

ISC

无锡固电

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN wideband transistor

DESCRIPTION NPN wideband transistor in a SOT89 plastic package. FEATURES • High gain • High output voltage • Low noise • Gold metallization ensures excellent reliability • Low thermal resistance. APPLICATIONS • VHF, UHF and CATV amplifiers.

文件：238.35 Kbytes 页数：8 Pages

恩XP

Silicon NPN RF Transistor

DESCRIPTION ·High Gain ·High Output Voltage ·Low Noise APPLICATIONS ·Designed for use in VHF, UHF and CATV amplifiers.

文件：77.86 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN wideband dual transistor

DESCRIPTION NPN wideband transistor in a SOT89 plastic package. FEATURES • High gain • High output voltage • Low noise • Gold metallization ensures excellent reliability • Low thermal resistance. APPLICATIONS • VHF, UHF and CATV amplifiers.

文件：71.68 Kbytes 页数：8 Pages

PHI

PHI

Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure APPLICATIONS • Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment.

文件：87.21 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印：BCp；Package：SOT-89；NPN 7 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a SOT89 plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and R

文件：251.8 Kbytes 页数：11 Pages

恩XP

丝印：BCp；Package：SOT-89；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP