丝印：WV2；Package：SOT-323；Silicon NPN Planar RF Transistor

Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC     and WEEE 2002/96/EC Applications     Low noise small signal amplifiers up to 2 GHz. This     transistor has superior noise figur

文件：185.85 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN 8 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellen

文件：101.5 Kbytes 页数：10 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon NPN transistor in a SOT-323 Plastic Package

Descriptions Silicon NPN transistor in a SOT-323 Plastic Package. Features Small feedback capacitance, low noise figure, high fT. Applications Low noise small signal amplifiers up to 2 GHZ.

文件：766.63 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability proper

文件：74.82 Kbytes 页数：10 Pages

PHI

PHI

NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA.

文件：85.2 Kbytes 页数：3 Pages

SIEMENS

西门子

NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)

NPN Silicon RF Transistor ● For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available.

文件：339.55 Kbytes 页数：14 Pages

SIEMENS

西门子

NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)

NPN Silicon RF Transistor ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

文件：499.2 Kbytes 页数：18 Pages

SIEMENS

西门子

NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)

NPN Silicon RF Transistor ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263.

文件：325.33 Kbytes 页数：14 Pages

SIEMENS

西门子

NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz)

NPN Silicon RF Transistor ● For low-noise IF and broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/261.

文件：677.5 Kbytes 页数：13 Pages

SIEMENS

西门子