| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPN video transistor DESCRIPTION NPNsilicontransistorina3-leadplasticSOT54package. FEATURES •Lowoutputcapacitance •Highdissipation •Highgainbandwidthproduct. APPLICATIONS •Bufferstageincolourmonitorsbetweenthevideoamplifierandtheinputofthevideomodule •Pre-s | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 6.5 GHz wideband transistor DESCRIPTION NPNwidebandtransistorina4-leaddual-emitterSOT172A2packagewithaceramiccap.Allleadsareisolatedfromthemountingbase. FEATURES •Optimumtemperatureprofileandexcellentreliabilitypropertiesensuredbyemitter-ballastingresistorsandapplicationofgoldsandwichm | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorinafour-leaddual-emitterSOT122Aenvelopewithaceramiccap.Allleadsareisolatedfromthestud.Diffusedemitter-ballastingresistorsandtheapplicationofgoldsandwich metallizationensureanoptimumtemperatureprofileandexcellentreliabilitypropertie | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
PNP 5 GHz wideband transistor DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalyzers,etc.,usingSMDtechnology. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
PNP 5 GHz wideband transistor DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalysers,etc.,usingSMDtechnology. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
PNP video transistor DESCRIPTION PNPvideotransistorinaSOT54plasticpackage. FEATURES •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Pre-stagedriverbetweenvideoamplifierandvideomodule. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT54(TO-92)plasticpackage. FEATURES •Lowoutputcapacitance •Highgainbandwidth •Highcurrentapplicability •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Pre-stagedriverinhighresolutioncolour | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT32(TO-126)package. FEATURES •Lowoutputcapacitance •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Pre-stagedriverinhigh-resolutioncolourgraphicsmonitors. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT223plasticpackage. FEATURES •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Highcurrentapplicability •Surfacemounting. APPLICATIONS •Videoamplifiercascodedriver | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 1 GHz wideband transistor DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorhasextremelygoodintermodulationpropertiesandahighpowergain. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorinaplasticSOT89envelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforMATVpurposes. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorinaplasticSOT89envelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforMATVpurposes. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforuseinUHFandmicrowaveamplifierssuchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzersetc. Thetransistorfeaturesverylowi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforuseinUHFandmicrowaveamplifierssuchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzersetc. Thetransistorfeaturesverylowi | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=7.5GHz F=1.3dBat900MHz | SIEMENS Siemens Ltd | SIEMENS | ||
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA •CECC-typeavailable:CECC50002/259 | SIEMENS Siemens Ltd | SIEMENS | ||
NPN Silicon RF Transistor NPNSiliconRFTransistor* •Forlownoise,lowdistortionbroadband amplifiersinantennaand telecommunicationssystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
超高频/特高频 （UHF）_功率放大 （L）
- 封装形式：
贴片封装
- 极限工作电压：
19V
- 最大电流允许值：
0.15A
- 最大工作频率：
6.5GHZ
- 引脚数：
4
- 可代换的型号：
- 最大耗散功率：
0.7W
- 放大倍数：
- 图片代号：
G-127
- vtest：
19
- htest：
6500000000
- atest：
.15
- wtest：
.7
详细参数
- 型号：
BFQ
- 制造商：
PHILIPS
- 制造商全称：
NXP Semiconductors
- 功能描述：
NPN 6.5 GHz wideband transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHILIPS/飞利浦 |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
询价 | ||
PHILIPS/飞利浦 |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
PHILIPS |
2017+ |
TO-55 |
52145 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
PHILIPS |
23+ |
TO-55 |
750 |
专营高频管模块,全新原装! |
询价 | ||
PHILIPS |
2022 |
526 |
原厂原装正品,价格超越代理 |
询价 | |||
23+ |
N/A |
12550 |
正品授权货源可靠 |
询价 | |||
PHILIPS |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
询价 | ||
PHILIPS |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
PHI |
18+ |
2173 |
公司大量全新正品 随时可以发货 |
询价 | |||
PHILIPS/飞利浦 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 |
