丝印：BFQ；Package：SMC；1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Glass Passivated Die Construction 1500W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time

文件：108.74 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：BFQ；Package：DO-214AB；5.0 To 440V 1500W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 1μA above 11V 1500W Peak power capability at 10 × 1000μs waveform Repetition rate (

文件：4.24665 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：BFQ；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Plastic Case Material has UL Flammability

文件：312.25 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：BFQ；Package：DO-214AB；Surface Mount Transient Voltage Suppressors

文件：606.24 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

丝印：BFQ；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

文件：1.08724 Mbytes 页数：5 Pages

SUNMATE

森美特

丝印：BFQ；Package：SMC；Surface Mount Transient Voltage Suppressors

文件：312.25 Kbytes 页数：4 Pages

ANOVA

林朋科技

NPN video transistor

DESCRIPTION NPN silicon transistor in a 3-lead plastic SOT54 package. FEATURES • Low output capacitance • High dissipation • High gain bandwidth product. APPLICATIONS • Buffer stage in colour monitors between the video amplifier and the input of the video module • Pre-s

文件：40.9 Kbytes 页数：6 Pages

PHI

PHI

NPN 6.5 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. FEATURES • Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich m

文件：78.62 Kbytes 页数：12 Pages

PHI

PHI

NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability propertie

文件：73.48 Kbytes 页数：9 Pages

PHI

PHI

PNP 5 GHz wideband transistor

DESCRIPTION PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar systems, spectrum analyzers, etc., using SMD technology.

文件：37.97 Kbytes 页数：6 Pages

PHI

PHI