NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability propertie

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PHI

PHI

NPN 4 GHz wideband transistor

DESCRIPTION\nNPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich\nmetallization ensure an optimum temperature profile and excellent reliability properties. It extremely high output voltage capabilities. It is primarily intended for final stages in UHF amplifiers. ;

恩XP

VHF power amplifier modules

DESCRIPTION The BGY135 and BGY136 are two-stage broadband RF amplifier modules in a SOT132B package. Each module consists of two NPN transistor dies together with lumped-element matching components. FEATURES • 12.5 V nominal supply voltage • 18 W output power. APPLICATIONS • Mobile communica

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PHI

PHI

SURFACE MOUNT CHIP LED LAMPS

文件：260.61 Kbytes 页数：1 Pages

YSTONE

早安股份

Emitted Color : Amber

文件：229.57 Kbytes 页数：8 Pages

BRIGHT

佰鸿