NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability propertie

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PHI

PHI

NPN 4 GHz wideband transistor

DESCRIPTION\nNPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich\nmetallization ensure an optimum temperature profile and excellent reliability properties. It extremely high output voltage capabilities. It is primarily intended for final stages in UHF amplifiers. ;

恩XP

2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

文件：110.36 Kbytes 页数：8 Pages

NSC

国半

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

文件：284.67 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

文件：150.99 Kbytes 页数：3 Pages

MOSPEC

统懋