PNP 5 GHz wideband transistor

DESCRIPTION PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar systems, spectrum analysers, etc., using SMD technology.

文件：227.64 Kbytes 页数：7 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

PNP video transistor

DESCRIPTION PNP video transistor in a SOT54 plastic package. FEATURES • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Pre-stage driver between video amplifier and video module.

文件：58.72 Kbytes 页数：8 Pages

PHI

PHI

NPN video transistor

DESCRIPTION NPN video transistor in a SOT54 (TO-92) plastic package. FEATURES • Low output capacitance • High gain bandwidth • High current applicability • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Pre-stage driver in high resolution colour

文件：53.44 Kbytes 页数：8 Pages

PHI

PHI

NPN video transistor

DESCRIPTION NPN video transistor in a SOT32 (TO-126) package. FEATURES • Low output capacitance • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Pre-stage driver in high-resolution colour graphics monitors.

文件：62.76 Kbytes 页数：8 Pages

PHI

PHI

NPN video transistor

DESCRIPTION NPN video transistor in a SOT223 plastic package. FEATURES • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • High current applicability • Surface mounting. APPLICATIONS • Video amplifier cascode driver

文件：65.43 Kbytes 页数：8 Pages

PHI

PHI

NPN 1 GHz wideband transistor

DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain.

文件：35.13 Kbytes 页数：6 Pages

PHI

PHI

NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes.

文件：37.77 Kbytes 页数：6 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes.

文件：227.38 Kbytes 页数：7 Pages

恩XP