NPN 8 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellen

文件：101.5 Kbytes 页数：10 Pages

PHI

PHI

丝印：WV2；Package：SOT-323；Silicon NPN Planar RF Transistor

Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC     and WEEE 2002/96/EC Applications     Low noise small signal amplifiers up to 2 GHz. This     transistor has superior noise figur

文件：185.85 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon NPN transistor in a SOT-323 Plastic Package

Descriptions Silicon NPN transistor in a SOT-323 Plastic Package. Features Small feedback capacitance, low noise figure, high fT. Applications Low noise small signal amplifiers up to 2 GHZ.

文件：766.63 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：WV2；Package：SOT-323；Silicon NPN Planar RF Transistor

文件：281.7 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN 8 GHz wideband transistor

文件：85.2 Kbytes 页数：10 Pages

JMNIC

锦美电子

BFQ67W_2015

文件：85.2 Kbytes 页数：10 Pages

JMNIC

锦美电子

NPN 8 GHz宽频带晶体管

硅NPN晶体管，采用SOT323塑料封装。该晶体管设计用于卫星电视调谐器和高达2 GHz的便携式RF通信设备等宽带应用。 金属化镀金确保极佳的可靠性\n高功率增益\n高传送频率\n低噪声;

恩XP