丝印：REs；Package：SOT-23；NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communications systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m • fT = 7.5 GHz F = 1.5 dB at 900 MHz

文件：78.41 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communications systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m • fT = 7.5 GHz F = 1.5 dB at 900 MHz

文件：56.88 Kbytes 页数：7 Pages

SIEMENS

西门子

Silicon NPN Planar RF Transistor

Features • Low power applications • Low noise figure • High transition frequency Applications    For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA.

文件：68.08 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features • Low power applications • Low noise figure • High transition frequency Applications    For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA.

文件：68.08 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems

NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m • fT = 7.5 GHz F = 1.5 dB at 900 MHz

文件：56.09 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m • fT = 7.5 GHz F = 1.5 dB at 900 MHz

文件：77.67 Kbytes 页数：7 Pages

INFINEON

英飞凌

RF-Bipolar - NPN Silicon RF transistor for low noise, low power amplifiers

Infineon

英飞凌

Silicon NPN Planar RF Transistor

Vishay

威世

包装：袋 类别：连接器，互连器件 圆形连接器组件 描述：CIRCULAR

ITT

包装：散装 类别：连接器，互连器件 圆形连接器组件 描述：CIRCULAR

ITT