N-P-N H.F. WIDEBAND TRANSISTOR

文件：243.7 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN Silicon RF Transistor

Preliminary data ● For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA ● fT = 9 GHz F = 1 dB at 1 GHz

文件：100.99 Kbytes 页数：4 Pages

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NPN Silicon RF Transistor

Preliminary data ● For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA ● fT = 9 GHz F = 1 dB at 1 GHz

文件：100.99 Kbytes 页数：4 Pages

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NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data ​​​​​​​● For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA ● fT = 9 GHz F = 1.0 dB at 1 GHz

文件：28.06 Kbytes 页数：3 Pages

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丝印：RKs；Package：SOT-416；NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA ● fT = 9 GHz F = 1.0 dB at 1 GHz

文件：68.44 Kbytes 页数：7 Pages

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NPN 3.5 GHz wideband transistor

DESCRIPTION NPN resistance-stabilized transistor in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Due to its high transition frequency, it has a high power gain, in conjunction with good wideband propertie

文件：69.62 Kbytes 页数：9 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 3.5 GHz wideband transistor

DESCRIPTION NPN resistance-stabilized transistor in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Dueto Its high transition frequency, it has a high power gain, in conjunction with good wideband properties, an

文件：94.2 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN Silicon RF Transistor

文件：46.16 Kbytes 页数：5 Pages

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