NPN 3.5 GHz wideband transistor

DESCRIPTION NPN resistance-stabilized transistor in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Due to its high transition frequency, it has a high power gain, in conjunction with good wideband propertie

文件：69.62 Kbytes 页数：9 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 3.5 GHz wideband transistor

DESCRIPTION NPN resistance-stabilized transistor in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Dueto Its high transition frequency, it has a high power gain, in conjunction with good wideband properties, an

文件：94.2 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 5 GHz wideband transistor

文件：339.73 Kbytes 页数：14 Pages

恩XP

NPN 5 GHz宽频带晶体管

NPN宽带晶体管，采用SOT23塑料封装。PNP补充型号；BFT92 符合AEC-Q101标准\n高功率增益\n低互调失真\n低噪声系数;

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Trans GP BJT NPN 15V 0.025A Automotive 3-Pin TO-236AB

NJS

NPN 5 GHz宽频带晶体管

硅NPN晶体管，采用SOT323 (S-mini)塑料封装。BFR94AW使用的晶体与采用SOT23封装的BFR94A相同。 符合AEC-Q101标准\n金属化镀金确保极佳的可靠性\n高功率增益;

恩XP