NPN 5 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. FEATURES • Very low intermodulation distortion • High power gain • Excellent wideband properties and low noise up to high frequencies due to its very high transition frequency. APPLICATIONS • RF wideband

文件：99.05 Kbytes 页数：12 Pages

PHI

飞利浦

Silicon NPN Planar RF Transistor

Features ● High power gain ● Low noise figure ● High transition frequency Applications     RF amplifier up to GHz range specially for wide band antenna amplifier.

文件：122 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features ● High power gain ● Low noise figure ● High transition frequency Applications RF-amplifier up to GHz range specially for wide band antenna amplifier.

文件：85.53 Kbytes 页数：5 Pages

Temic

NPN 5 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. FEATURES • Very low intermodulation distortion • High power gain • Excellent wideband properties and low noise up to high frequencies due to its very high transition frequency. APPLICATIONS • RF wideband

文件：99.05 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：R2p；Package：SOT-23；NPN 6 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. FEATURES • High power gain • Low noise figure • Very low intermodulation distortion. APPLICATIONS • RF wideband amplifiers and oscillators.

文件：117.7 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：R2p；Package：SOT-23；NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

文件：80.54 Kbytes 页数：7 Pages

Infineon

英飞凌

isc Silicon NPN RF Transistor

DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators.

文件：199.6 Kbytes 页数：7 Pages

ISC

无锡固电

Silicon NPN Planar RF Transistor

Features ● High power gain ● High transition frequency ● Low noise figure Applications     Wide band amplifier up to GHz range.

文件：146.57 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：R2p；Package：SOT-23；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure APPLICATIONS • Designed for use in RF wideband amplifiers and oscillators.

文件：70.47 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司