BFR93A

丝印：R2p；Package：SOT-23；NPN 6 GHz wideband transistor

DESCRIPTION NPNwidebandtransistorinaplasticSOT23package.PNPcomplement:BFT93. FEATURES •Highpowergain •Lownoisefigure •Verylowintermodulationdistortion. APPLICATIONS •RFwidebandamplifiersandoscillators.

PHI

BFR93A

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentfrom2mAto30mA •CECC.typeavailable:CECC50002/256

BFR93A

丝印：R2p；Package：SOT-23；NPN Silicon RF Transistor

NPNSiliconRFTransistor* •Forlow-noise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription

BFR93A

Silicon NPN Planar RF Transistor

Features ●Highpowergain ●Hightransitionfrequency ●Lownoisefigure Applications    WidebandamplifieruptoGHzrange.

BFR93A

isc Silicon NPN RF Transistor

DESCRIPTION ·HighPowerGain ·HighCurrentGainBandwidthProduct ·LowNoiseFigure APPLICATIONS ·DesignedforuseinRFwidebandamplifiersandoscillators.

BFR93A

Silicon NPN RF Transistor

DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure APPLICATIONS •DesignedforuseinRFwidebandamplifiersandoscillators.

BFR93A

丝印：R2p；Package：SOT-23；RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC

BFR93A

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Highpowergain,lownoisefigure,verylowintermodulationdistortion. Applications RFwidebandamplifiersandoscillators.

BFR93A

RF Tranasitor; High Power Gain Low Noise Figure High Current Gain Bandwidth Product;

The UTC BFR93A is an isc silicon NPN RF transistor, it usesUTC’s advanced technology to provide customers with high powergain and low noise figure, etc.The UTC BFR93A is designed for use in RF wideband amplifiersand oscillators.

BFR93A

高线性硅和SiGe:C（硅锗：碳）晶体管，可用于高达6 GHz的频率; ·For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA\n ·Pb-free (RoHS compliant) package\n;

NPN Silicon RF Transistor