丝印：R2p；Package：SOT-23；Low Noise Silicon Bipolar RF Transistor

文件：614.9 Kbytes 页数：6 Pages

INFINEON

英飞凌

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broad band amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition t

文件：75.48 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF TRANSISTORS NPN SILICON

Designedprimarily for use in high–gain, low–noise, small–signal UHF and microwaveamplifiers constructed with thick and thin–film circuits using surface mount components. • T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel.

文件：54.96 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

NPN 6 GHz wideband transistor

General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. Features ■ Very high power gain ■ Low noise figure ■ Very low intermodulation distortion Applications ■ RF wideband amplifiers and oscillators

文件：95.72 Kbytes 页数：13 Pages

恩XP

Silicon NPN Planar RF Transistor

Features ● High power gain ● High transition frequency ● Low noise figure Applications     Wide band amplifier up to GHz range.

文件：146.57 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 5 GHz wideband transistor

DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR93AT uses the same die as the SOT23 version: BFR93A. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS Designe

文件：86.35 Kbytes 页数：16 Pages

PHI

PHI

NPN Silicon RF Transistor

For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA

文件：70.35 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

文件：79.66 Kbytes 页数：7 Pages

INFINEON

英飞凌

Silicon NPN Planar RF Transistor

Features ● High power gain ● High transition frequency ● Low noise figure Applications     Wide band amplifier up to GHz range.

文件：146.57 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司