NPN 9 GHz wideband transistor

DESCRIPTION The BFR505 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners

文件：120.89 Kbytes 页数：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：N0；Package：SOT-416；NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT416 (SC-75) package. FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS Low power amplifiers, oscillat

文件：103.54 Kbytes 页数：16 Pages

PHI

PHI

丝印：N0；Package：SOT-416；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 9 GHz wideband transistor

文件：104.97 Kbytes 页数：12 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件：104.97 Kbytes 页数：12 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件：116.92 Kbytes 页数：16 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件：116.92 Kbytes 页数：16 Pages

JMNIC

锦美电子

NPN 9 GHz宽频带晶体管

NPN硅平面外延晶体管，设计用于RF前端GHz范围内的宽带应用，比如模拟和数字移动电话、无绳电话（CT1、CT2、DECT等）、光纤系统中的雷达探测器、传呼机和卫星电视(SATV)调谐器。该晶体管采用SOT23塑料封装。 金属化镀金确保极佳的可靠性\n高功率增益\n高传送频率\n低噪声;

恩XP

NPN 9 GHz宽频带晶体管

NPN晶体管，采用SOT416 (SC-75)塑料封装。 金属化镀金确保极佳的可靠性\n高功率增益\n高传送频率\n低噪声\n小型封装;

恩XP