丝印：N0；Package：SOT-416；NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT416 (SC-75) package. FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS Low power amplifiers, oscillat

文件：103.54 Kbytes 页数：16 Pages

PHI

PHI

丝印：N0；Package：SOT-416；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 9 GHz wideband transistor

文件：116.92 Kbytes 页数：16 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件：116.92 Kbytes 页数：16 Pages

JMNIC

锦美电子

NPN 9 GHz宽频带晶体管

NPN晶体管，采用SOT416 (SC-75)塑料封装。 金属化镀金确保极佳的可靠性\n高功率增益\n高传送频率\n低噪声\n小型封装;

恩XP