BFR505T

Marking：N0；Package：SOT-416；RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BFR505T

Marking：N0；Package：SOT-416；NPN 9 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT416(SC-75)package. FEATURES •Lowcurrentconsumption •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability •SOT416(SC-75)package. APPLICATIONS Lowpoweramplifiers,oscillat

BZX384-B33

Marking：N0；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.

BZX384-B33

Marking：N0；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

BZX384-B33

Marking：N0；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.

BZX384-B33-Q

Marking：N0；Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

DDTC123JLP-7

Marking：N0；Package：X1-DFN1006-3；NPN PRE-BIASED (R1≠R2) SMALL SIGNAL IN DFN1006

Features -EpitaxialPlanarDieConstruction -Ultra-SmallLeadlessSurfaceMountPackage -IdeallySuitedforAutomatedAssemblyProcesses -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFree.GreenDevice(Note3) -QualifiedtoAEC-Q101StandardsforHighR

DDTC123JLP-7B

Marking：N0；Package：X1-DFN1006-3；NPN PRE-BIASED (R1≠R2) SMALL SIGNAL IN DFN1006

Features -EpitaxialPlanarDieConstruction -Ultra-SmallLeadlessSurfaceMountPackage -IdeallySuitedforAutomatedAssemblyProcesses -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFree.GreenDevice(Note3) -QualifiedtoAEC-Q101StandardsforHighR

ISL9016IRUJJZ-T

Marking：N0；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mADualLDOwithLowNoise,HighPSRR,andLowIQ ISL9016isahighperformancedualLDOcapableofprovidingupto150mAcurrentoneachchannel.ItfeaturesalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto4.7µFwithanESRofupto200mΩ. Features •

RSX088LAP2S

Marking：N0；Package：SOD-128；Schottky Barrier Diode

●Features Highreliability Smallpowermoldtype UltralowIR ●Application Switchingpowersupply Freewheeldiode Reversepolarityprotection ●Structure Siliconepitaxialplanar