NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA • fT = 7 GHz F = 2.1 dB at 900 MHz

文件：79.56 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz

文件：56.42 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor\u0001For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA\nfT= 7 GHz\n  F= 2.1 dB at 900 MHz

Infineon

英飞凌

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

文件：228.62 Kbytes 页数：4 Pages

MOSPEC

统懋

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

文件：95.2 Kbytes 页数：12 Pages

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

文件：95.2 Kbytes 页数：12 Pages

NEC

瑞萨